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BF1101 - N-channel dual-gate MOS-FETs

Datasheet Summary

Description

BF1101R marking code: NCp.

Simplified outline (SOT143R).

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Datasheet Details

Part number BF1101
Manufacturer NXP
File Size 128.13 KB
Description N-channel dual-gate MOS-FETs
Datasheet download datasheet BF1101 Datasheet
Additional preview pages of the BF1101 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.
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