BF1101WR - N-channel dual-gate MOS-FETs

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NXP

BF1101WR N-channel dual-gate MOS-FETs by NXP - Datasheet Preview — Datasheet preview – BF1101WR

Datasheet Details

Part number	BF1101WR
Manufacturer	NXP
File Size	128.13 KB
Description	N-channel dual-gate MOS-FETs
Datasheet	BF1101WR Datasheet
Additional preview pages of the BF1101WR datasheet.

Product details

Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1101R marking code: NCp.Fig.2 Simplified outline (SOT143R).3 fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.Integrated diodes between gates and source protect against excessive input voltage surges.The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.1 Top view 2 MSB014 2 Top vi

Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP

BF1101 - N-channel dual-gate MOS-FETs
BF1101R - N-channel dual-gate MOS-FETs
BF1100 - Dual-gate MOS-FETs
BF1100R - Dual-gate MOS-FETs
BF1100WR - Dual-gate MOS-FET
BF1102 - Dual N-channel dual gate MOS-FET

Published: Mar 23, 2005 |