BF1101R Datasheet - NXP

N-channel dual-gate MOS-FETs

BF1101R Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS

BF1101R General Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1101R marking code: NCp. Fig.2 Simplified outline (SOT143R). 3 fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and s.

BF1101R Datasheet (128.13 KB)

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Datasheet Details

Part number:

BF1101R

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NXP ↗

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128.13 KB

Description:

N-channel dual-gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product speciﬁcation Supersedes data of 1999 Feb 01 1999 M.

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BF1101R N-channel dual-gate MOS-FETs NXP

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BF1101R Features

BF1101R General Description

Datasheet Details

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