BF1100 mos-fets equivalent, dual-gate mos-fets.
* Specially designed for use at 9 to 12 V supply voltage
* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noi.
* VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancem.
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source
BF1100; BF1100R
and substrate interconnected and an internal bias circuit to ensure good cros.
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