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BF1102 Datasheet

Dual N-channel dual gate MOS-FET

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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
MBD128
BF1102
Dual N-channel dual gate MOS-FET
Preliminary specification
1999 Jul 08


NXP Semiconductors Electronic Components Datasheet

BF1102 Datasheet

Dual N-channel dual gate MOS-FET

No Preview Available !

Philips Semiconductors
Dual N-channel dual gate MOS-FET
Preliminary specification
BF1102
FEATURES
Two low noise gain controlled amplifiers in a single
package
Specially designed for 5 V applications
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
PINNING - SOT363
PIN DESCRIPTION
1 gate 1 (1)
2 gate 2 (1,2)
3 drain (1)
4 drain (2)
5 source (1,2)
6 gate 1 (2)
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
DESCRIPTION
The BF1102 is a combination of two equal dual gate
MOS-FETs with shared source and gate 2 leads.
The source and substrate are interconnected. An internal
bias circuit enables DC stabilization and a very good
cross-modulation performance at 5 V supply voltage.
Integrated diodes between the gates and source protect
against excessive input voltage surges. The transistor has
a SOT363 micro-miniature plastic package.
handbook, halfpage
g2 (1, 2)
654
g1 (1)
AMP1
d (1)
123
Marking code: W1.
g1 (2)
AMP2
s (1, 2)
d (2)
MBL029
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per MOS-FET unless otherwise specified
VDS
ID
Ptot
yfs
Cig1-s
Crss
F
Xmod
Tj
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
Ts 102 °C; note 1
ID = 15 mA
ID = 15 mA
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
43
2.8
30
7V
40 mA
200 mW
mS
pF
fF
2.8 dB
dBµV
150 °C
Note
1. Ts is the temperature at the soldering point of the source lead.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jul 08
2


Part Number BF1102
Description Dual N-channel dual gate MOS-FET
Maker NXP
Total Page 12 Pages
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