Part BF1102
Description Dual N-channel dual gate MOS-FET
Category MOSFET
Manufacturer NXP Semiconductors
Size 154.37 KB
NXP Semiconductors

BF1102 Overview

Key Features

  • Two low noise gain controlled amplifiers in a single package
  • Specially designed for 5 V applications
  • Superior cross-modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance ratio. APPLICATIONS
  • MBL029 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN
  • Ts ≤ 102 °C; note 1 ID = 15 mA ID = 15 mA f = 1 MHz f = 800 MHz
  • MAX. UNIT Per MOS-FET unless otherwise specified VDS ID Ptot yfs Cig1-s Crss F Xmod Tj Note