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BF1102 - Dual N-channel dual gate MOS-FET

Description

The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads.

The source and substrate are interconnected.

An internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage.

Features

  • Two low noise gain controlled amplifiers in a single package.
  • Specially designed for 5 V.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF1100 Dual-gate MOS-FETs
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BF1101 N-channel dual-gate MOS-FETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES • Two low noise gain controlled amplifiers in a single package • Specially designed for 5 V applications • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio. APPLICATIONS • Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads. The source and substrate are interconnected.
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