BF1100R Datasheet - NXP

Dual-gate MOS-FETs

BF1100R Features

* Specially designed for use at 9 to 12 V supply voltage

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. APPLICATIONS

BF1100R General Description

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source BF1100; BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The d.

BF1100R Datasheet (159.55 KB)

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Datasheet Details

Part number:

BF1100R

Manufacturer:

NXP ↗

File Size:

159.55 KB

Description:

Dual-gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product speciﬁcation File under Discrete Semiconductors, SC07 1995 Apr 25 Phi.

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BF1100R Dual-gate MOS-FETs NXP

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BF1100R Features

BF1100R General Description

Datasheet Details

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