Datasheet Details
| Part number | BF1100R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 159.55 KB |
| Description | Dual-gate MOS-FETs |
| Datasheet |
 BF1100R Datasheet
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General Description
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.
and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
Key Features
- Specially designed for use at 9 to 12 V supply voltage.
- Short channel transistor with high forward transfer admittance to input capacitance ratio.
- Low noise gain controlled amplifier up to 1 GHz.
- Superior cross-modulation performance during AGC.