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BF1100R Datasheet Dual-gate Mos-fets

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product specification.

General Description

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.

The transistor consists of an amplifier MOS-FET with source BF1100;

BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

Key Features

  • Specially designed for use at 9 to 12 V supply voltage.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Superior cross-modulation performance during AGC.

BF1100R Distributor