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BF1208 Datasheet

Dual N-channel dual gate MOSFET

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BF1208
Dual N-channel dual gate MOSFET
Rev. 01 — 16 March 2005
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
1.3 Applications
s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
x digital and analog television tuners
x professional communication equipment


NXP Semiconductors Electronic Components Datasheet

BF1208 Datasheet

Dual N-channel dual gate MOSFET

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Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1: Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
VDS
ID
Ptot
|yfs|
Ciss(G1)
drain-source voltage (DC)
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate1
Tsp 109 °C
f = 1 MHz
amplifier A; ID = 19 mA
amplifier B; ID = 13 mA
f = 1 MHz
amplifier A
amplifier B
Crss reverse transfer capacitance f = 1 MHz
NF noise figure
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod cross-modulation
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
Tj junction temperature
[1] Tsp is the temperature at the soldering point of the source lead.
Min Typ Max Unit
- - 6V
- - 30 mA
[1] - - 180 mW
26 31 41 mS
28 33 43 mS
- 2.2 2.7 pF
- 2.0 2.5 pF
- 20 - fF
- 1.3 1.9 dB
- 1.4 2.1 dB
100 105 - dBµV
100 103 - dBµV
- - 150 °C
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline Symbol
654
G1A
AMP A
DA
123
G2
S
G1B
AMP B
sym089
DB
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2 of 22


Part Number BF1208
Description Dual N-channel dual gate MOSFET
Maker NXP
Total Page 22 Pages
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