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BF1218 Datasheet

Dual N-channel dual gate MOSFET

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BF1218
Dual N-channel dual gate MOSFET
Rev. 01 — 14 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and a very good cross modulation performance during Automatic Gain Control (AGC).
Integrated diodes between the gates and source protect against excessive input voltage
surges. The transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
Internal switch to save external components
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
digital and analog television tuners
professional communication equipment


NXP Semiconductors Electronic Components Datasheet

BF1218 Datasheet

Dual N-channel dual gate MOSFET

No Preview Available !

NXP Semiconductors
www.DataSheet4U.com
BF1218
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
VDS
ID
Ptot
yfs
Ciss(G1)
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
DC
DC
Tsp 109 C
f = 100 MHz; Tj = 25 C
amplifier A; ID = 19 mA
amplifier B; ID = 15 mA
f = 100 MHz
amplifier A
amplifier B
Crss reverse transfer capacitance f = 100 MHz
NF noise figure
YS = YS(opt)
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod cross modulation
input level for k = 1 %;
fw = 50 MHz;
funw = 60 MHz
at 40 dB AGC
amplifier A
amplifier B
Tj junction temperature
Min Typ
--
--
[1] -
-
26 31
25 30
[2] -
[2] -
[2] -
2.1
2.1
20
- 0.9
- 1.4
[3] 102 105
[4] 102 105
--
Max Unit
6V
30 mA
180 mW
41 mS
40 mS
2.6 pF
2.6 pF
- fF
1.5 dB
2.0 dB
- dBV
- dBV
150 C
[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 33 test circuit.
[4] Measured in Figure 34 test circuit.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline Graphic symbol
654
G1A
AMP A
DA
123
G2
S
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
G1B
AMP B
sym089
DB
© NXP B.V. 2010. All rights reserved.
2 of 23


Part Number BF1218
Description Dual N-channel dual gate MOSFET
Maker NXP
Total Page 23 Pages
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