• Part: BF1218
  • Description: Dual N-channel dual gate MOSFET
  • Category: MOSFET
  • Manufacturer: NXP Semiconductors
  • Size: 716.55 KB
Download BF1218 Datasheet PDF
NXP Semiconductors
BF1218
description The BF1218 is a bination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits - Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias - Internal switch to save external ponents - Superior cross modulation performance during AGC - High forward transfer admittance - High forward transfer admittance to input...