BFU550XR Datasheet - NXP

NPN wideband silicon RF transistor

* Low noise, high breakdown RF transistor

* AEC-Q101 qualified

* Minimum noise figure (NFmin) = 0.7 dB at 900 MHz

* Maximum stable gain 21.5 dB at 900 MHz

* 11 GHz fT silicon technology 1.3 Applications

* Applications requiring high supply voltages and

BFU550XR

290.10 KB

Npn wideband silicon rf transistor.

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BFU550XR NPN wideband silicon transistor NXP

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