BFU910F
Description
* = t : made in Malaysia * = w : made in China 5.
Key Features
- Low noise high gain microwave transistor
- Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
- Maximum stable gain 14.2 dB at 12 GHz
- 90 GHz fT SiGe technology 1.3 Applications
- Ku band DBS Low-Noise blocks 1.4 Quick reference data Table
- 2 - dBm NXP Semiconductors BFU910F NPN wideband silicon germanium RF transistor
