* Low noise high gain microwave transistor
* Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
* Maximum stable gain 14.2 dB at 12 GHz
* 90 GHz fT SiGe technology 1.3 Applications
* Ku band DBS Low-Noise blocks 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C
BFU910F
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Npn wideband silicon germanium rf transistor.
BFU910F NPN wideband silicon germanium RF transistor Rev. 2 16 January 2015 Product data sheet 1. Product profile 1.1 General descripti.
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