BFU910F transistor equivalent, npn wideband silicon germanium rf transistor.
* Low noise high gain microwave transistor
* Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
* Maximum stable gain 14.2 dB at 12 GHz
* 90 GHz fT SiGe tec.
in a plastic, 4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.
1.
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.
1.2 Features and benefits
* Low noise high gain micr.
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