BLF247B
FEATURES
- High power gain
- Easy power control
- Good thermal stability
- Withstands full load mismatch. APPLICATIONS
- Large signal applications in the VHF frequency range. DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the mon source connection for the transistor. PINNING
- SOT262A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source Fig.1 Simplified outline and symbol.
5 3
Top view
PIN CONFIGURATION
2 d g s g 5 4
MAM098 d
CAUTION The device is supplied in a antistatic package. The gate-source input must be protected against static charge during transport or handling. WARNING Product and environmental safety
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O discs are not damaged. All persons who handle, use or dispose of this product should be aware...
