* High power gain
* Easy power control
* Good thermal stability
* Withstands full load mismatch. APPLICATIONS
* Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulate
BLF247B
75.44 KB
Vhf push-pull power mos transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF247B VHF push-pull power MOS transistor
Product specification August 1994
Philips Semiconductors
Philips Semi.
📁 Related Datasheet
BLF242 - HF/VHF power MOS transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF242 HF/VHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specificat.
BLF242 - HF-VHF POWER MOSFET
(ASI)
HF-VHF POWER MOSFET
N-Channel Enhancement Mode
BLF242
DESCRIPTION:
The ASI BLF242 is intended for use
in 28 VDC large signal Applications.
FEATURES .
BLF2425M6L180P - Power LDMOS transistor
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BLF2425M6L180P; BLF2425M6LS180P
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Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
180 .
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(NXP)
BLF2425M6L180P; BLF2425M6LS180P
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Rev. 3 — 12 July 2013
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1.1 General description
180 W LD.
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BLF2425M6L180P; BLF2425M6LS180P
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1.1 General description
180 .
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180 W LD.
BLF2425M7L100 - Power LDMOS transistor
(Ampleon)
BLF2425M7L100; BLF2425M7LS100
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Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
100 W .
BLF2425M7L100 - Power LDMOS transistor
(NXP)
BLF2425M7L100; BLF2425M7LS100
Power LDMOS transistor
Rev. 1 — 6 December 2013
Product data sheet
1. Product profile
1.1 General description
100 W L.
