BLF244
FEATURES
- High power gain
- Low noise figure
- Easy power control
- Good thermal stability
- Withstands full load mismatch
- Gold metallization ensures excellent reliability.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.
Matched gate-source voltage (VGS) groups are available on request.
PINNING
- SOT123A
DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION handbook, halfpage
MSB057 d g MBB072 s
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety
- toxic materials
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