BLF276 - VHF power MOS transistor

Datasheet Summary

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V.

Features

High power gain.
Easy power control.
Good thermal stability.

NXP

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Datasheet Details

Part number	BLF276
Manufacturer	NXP
File Size	85.95 KB
Description	VHF power MOS transistor
Datasheet	BLF276 Datasheet
Additional preview pages of the BLF276 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor Product speciﬁcation December 1997 Philips Semiconductors Product speciﬁcation VHF power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT119 pill-package envelope, with a ceramic cap.

Published: Mar 23, 2005 |