BLF277 Datasheet - NXP

VHF power MOS transistor

BLF277 General Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbo.

BLF277 Datasheet (101.84 KB)

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BLF277

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NXP ↗

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101.84 KB

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Vhf power mos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLF277 VHF power MOS transistor Product speciﬁcation September 1992 Philips Semiconductors Product speciﬁcation.

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BLF277 VHF power MOS transistor NXP

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BLF277 General Description

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