BLF277 transistor equivalent, vhf power mos transistor.
* High power gain
* Easy power control
* Gold metallization ensures excellent reliability
* Good thermal stability
* Withstands full load mismatch. DE.
in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All .
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated f.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 101.84KB)
