BLV97 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor Features - Internal input matching to achieve high power gain - Ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability DESCRIPTION BLV97CE NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for mon emitter, class-AB operation in radio transmitters for the 960 MHz munications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA RF performance up to Th = 25 °C in a mon...