BLV910 Datasheet - NXP

BLV910 UHF power transistor

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. 2 4 6 c b PINNING - SOT171 PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter bas.

BLV910 Features

* Internal input matching to achieve high power gain and easy design of wideband circuits

* Emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATIONS

* Base station transmitters in the 820 to 960 M

BLV910 Datasheet (95.77 KB)