BLV910

UHF power transistor

NXP

BLV910 Features

* Internal input matching to achieve high power gain and easy design of wideband circuits

* Emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATIONS

* Base station transmitters in the 820 to 960 M

BLV910 General Description

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. 2 4 6 c b PINNING - SOT171 PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter bas.

BLV910 Datasheet (95.77 KB)

BLV910 Datasheet Preview — Preview of BLV910 PDF

Datasheet Details

Part number:

BLV910

Manufacturer:

NXP ↗

File Size:

95.77 KB

Description:

Uhf power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product speciﬁcation 1995 Apr 11 Philips Semiconductors Philips Semiconductors Pro.

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BLV910 UHF power transistor NXP

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BLV910 Features

BLV910 General Description

Datasheet Details

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