BLV910 Datasheet (NXP) - UHF power transistor

BLV910, UHF power transistor

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation.

The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap.

All leads are isolated from the flange.

2 4 6 c b PINNING - SOT171 PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter bas

BLV910 Features

* Internal input matching to achieve high power gain and easy design of wideband circuits

* Emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATIONS

* Base station transmitters in the 820 to 960 M