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BLV90 UHF power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor Product speciļ¬cation February 1996 Philips Semiconductors Product speciļ¬cation UHF .
NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. diffused emitter.

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Features

* BLV90
* diffused emitter-ballasting resistors for an optimum temperature profile.
* gold metallization ensures excellent reliability.
* the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). Th

Applications

* These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to ful

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