BLV920 Datasheet - NXP

BLV920 UHF power transistor

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange. 2 4 6 c b PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter b.

BLV920 Features

* Internal input matching to achieve high power gain and easy design of wideband circuits

* Emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATIONS

* Base station transmitters in the 820 to 960 M

BLV920 Datasheet (109.99 KB)