* Internal input matching to achieve high power gain and easy design of wideband circuits
* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability. APPLICATIONS
* Base station transmitters in the 820 to 960 M
BLV920
109.99 KB
Uhf power transistor.
DISCRETE SEMICONDUCTORS
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M3D076
BLV920 UHF power transistor
Product specification Supersedes data of 1995 Apr 10 1997 Nov 17
Philips Semi.
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