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NXP Semiconductors Electronic Components Datasheet

BLW80 Datasheet

UHF power transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW80
UHF power transistor
Product specification
March 1993


NXP Semiconductors Electronic Components Datasheet

BLW80 Datasheet

UHF power transistor

No Preview Available !

Philips Semiconductors
UHF power transistor
Product specification
BLW80
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
The transistor is housed in a 14"
capstan envelope with a ceramic cap.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-circuit.
MODE OF OPERATION
VCE
V
f PL Gp
MHz W dB
η
%
c.w.
12,5 470
4 > 8,0 > 60
c.w.
12,5 175
4 typ. 15,0 typ. 60
zi
2,1 + j2,3
2,0 j2,2
YL
mS
57 j56
51 j48
PIN CONFIGURATION
handbook, halfpage
4
1
3
PINNING - SOT122A.
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top view
2
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
2


Part Number BLW80
Description UHF power transistor
Maker NXP
Total Page 11 Pages
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