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NXP Semiconductors Electronic Components Datasheet

BLW85 Datasheet

HF/VHF power transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW85
HF/VHF power transistor
Product specification
March 1993


NXP Semiconductors Electronic Components Datasheet

BLW85 Datasheet

HF/VHF power transistor

No Preview Available !

Philips Semiconductors
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
Matched hFE groups are available on
request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
Product specification
BLW85
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION VCE
V
f
MHz
c.w. (class-B)
s.s.b. (class-AB)
12,5 175
12,5 1,628
PL
W
45
330 (P.E.P.)
Gp
dB
> 4,5
typ. 19,5
η
%
> 75
typ. 35
zi
1,4 + j1,5
ZL d3
dB
2,7j1,3
typ. 33
PIN CONFIGURATION
halfpage
1
2
4
handbook, halfpage
b
MBB012
3
MSB057
Fig.1 Simplified outline and symbol.
c
e
PINNING - SOT123
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
2


Part Number BLW85
Description HF/VHF power transistor
Maker NXP
Total Page 15 Pages
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