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BLW85 - HF/VHF power transistor

Description

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f.

and v.h.f.

transmitters with a nominal supply voltage of 12,5 V.

Features

  • F ceramic ca.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW85 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCE V 12,5 12,5 f MHz 175 1,6−28 PL W 45 3−30 (P.E.P.
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