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BU508AW - Silicon Diffused Power Transistor

General Description

High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 125 1.0 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16 kHz ICsat = 4.