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BU508A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BU508A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 12.

BU508A-2 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BU508A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Power Dissipation- : PD= 10.

BU508A-M - Silicon NPN Power Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Power Dissip.

BU508AF - Silicon Diffused Power Transistor (NXP)
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn .

BU508AFI - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot.

BU508AT - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BU508AT DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 1.

BU508AX - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BU508AX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum L.

BU508 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 125W@TC= 2.

BU508D - Horizontal Deflection Transistors (Multicomp)
BU508A, 508D Horizontal Deflection Transistors High Voltage Switching Specifically designed for use in large screen colour deflection circuits. Feat.

BU508DF - Silicon Diffused Power Transistor (NXP)
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn .