BUJ106A Datasheet - NXP

Silicon Diffused Power Transistor

BUJ106A General Description

High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Pto.

BUJ106A Datasheet (137.04 KB)

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BUJ106A

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NXP ↗

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137.04 KB

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Silicon diffused power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Silicon Diffused .

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BUJ106A General Description

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