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BUK724R5-30C - N-channel TrenchMOS intermediate level FET

Description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.

Features

  • AEC Q101 compliant.
  • Avalanche robust.
  • Suitable for standard level gate drive.
  • Suitable for thermally demanding environment up to 175°C rating 1.3.

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Full PDF Text Transcription

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BUK724R5-30C N-channel TrenchMOS standard level FET Rev. 01 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment up to 175°C rating 1.3 Applications „ 12V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width Modulation (PWM) applications 1.4 Quick reference data Table 1.
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