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BUK9775-55 Datasheet, NXP

BUK9775-55 fet equivalent, trenchmos transistor logic level fet.

BUK9775-55 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 68.35KB)

BUK9775-55 Datasheet
BUK9775-55
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 68.35KB)

BUK9775-55 Datasheet

Features and benefits

very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching application.

Application

BUK9775-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total.

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is inte.

Image gallery

BUK9775-55 Page 1 BUK9775-55 Page 2 BUK9775-55 Page 3

TAGS

BUK9775-55
TrenchMOS
transistor
Logic
level
FET
NXP

Manufacturer


NXP (https://www.nxp.com/)

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