J113 - N-channel silicon field-effect transistors

Description

Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes.

They are intended for applications such as analog switches, choppers, commutators etc.

Features

High speed switching.
Interchangeability of drain and source connections.
Low RDS on at zero gate voltage.

NXP

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J113 N-channel silicon field-effect transistors by NXP - Datasheet Preview — Datasheet preview – J113

Datasheet Details

Part number	J113
Manufacturer	NXP
File Size	35.07 KB
Description	N-channel silicon field-effect transistors
Datasheet	J113 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product speciﬁcation File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 J111; J112; J113 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92.

Published: Apr 5, 2005 |