LTE21009R transistor equivalent, npn microwave power transistor.
* Diffused emitter ballasting resistors
* Self-aligned process entirely ion implanted and gold sandwich metallization
* optimum temperature profile
* exce.
* Common emitter class-A linear power amplifiers up to 4.2 GHz.
3 b
e
MAM131
DESCRIPTION NPN silicon planar epitax.
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