LTE21015R transistor equivalent, npn microwave power transistor.
* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
* Common emitter class-A linear power amplifiers up to 2 GHz.
2 3
olumns
LTE21015R
PINNING - SOT440A PIN 1 2 3 coll.
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