LTE21025R transistor equivalent, npn microwave power transistor.
* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
* Self-aligned process entirely ion implanted
* Gold me.
* Common emitter class-A linear power amplifiers up to 4.2 GHz.
3 b
DESCRIPTION
2
MAM131
e
NPN silicon planar epi.
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