* Advanced GaN on SiC, offering high power density
* Decade bandwidth performance
* Enhanced thermal resistance packaging
* Input matched for extended wideband performance
* High ruggedness: > 20:1 VSWR Typical Applications
* Ideal for military end
MMRF5018HS Datasheet (197.19 KB)
MMRF5018HS
197.19 KB
Rf power gan transistor.
MMRF5018HS RF Power GaN Transistor Rev. 0 July 2022 This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz an.
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