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MRF13750HS Datasheet Rf Power Ldmos Transistors

Manufacturer: NXP Semiconductors

Overview: NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type 915 (1) CW 915 (2) Pulse (100 sec, 10% Duty Cycle) 1300 (3) CW Pout (W) 750 850 700 Gps (dB) 19.3 20.5 17.2 D (%) 67.1 69.2 56.0 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 915 (2) Pulse (100 sec, 10% Duty Cycle) > 10:1 at all Phase Angles Pin (W) 15.9 Peak (3 dB Overdrive) Test Voltage 50 Result No Device Degradation 1. Measured in 915 MHz narrowband reference circuit (page 5). 2. Measured in 915 MHz narrowband production test fixture (page 11). 3. Measured in 1300 MHz narrowband reference circuit (page 8).

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Internally input pre--matched for ease of us.

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