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MRF282SR1 Datasheet - NXP

MRF282SR1 RF Power Field Effect Transistors

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. Specified Two Tone Performance @ 2000 MHz, 26 Volts Output Power 10 Watts PEP Powe.

MRF282SR1 Features

* Excellent Thermal Stability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* RoHS Compliant

* Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rati

MRF282SR1-NXP.pdf