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MRF6S9060MBR1 - RF Power Field Effect Transistors

Download the MRF6S9060MBR1 datasheet PDF. This datasheet also covers the MRF6S9060MR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF6S9060MR1-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6S9060 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S9045 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S9125MBR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S9125MR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF6S9125NBR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRF6S9060MR1 RF Power Field Effect Transistors
MRF6S9060NBR1 RF Power Field Effect Transistors
MRF6S9060NR1 RF Power Field Effect Transistors
MRF6S21140HR3 RF Power FET
MRF6S21140HSR3 RF Power FET

Full PDF Text Transcription

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg.
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