logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

MRF6V14300HR3 NXP

MRF6V14300HR3 RF Power Field Effect Transistors

MRF6V14300HR3 Avg. rating / M : star-117

datasheet Download

MRF6V14300HR3 Datasheet

Features and benefits


• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation.

Application

operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed a.

Image gallery

MRF6V14300HR3 MRF6V14300HR3 MRF6V14300HR3

TAGS
MRF6V14300HR3
Power
Field
Effect
Transistors
MRF6V14300HSR3
MRF6V10250HSR3
MRF6V12500GS
NXP
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy