MRF6V14300HSR3 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large--Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation.
operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed a.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 667.31KB)