* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost-effective replacement of medium power transistors BCP55 and BCX55. 1.3 Applications s Major applicat
PBSS4160U Datasheet (185.83 KB)
PBSS4160U
185.83 KB
1a npn transistor.
www.DataSheet4U.com PBSS4160U 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 23 April 2004 Objective data sheet 1. Product profile 1.1 .
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