* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55 1.3 Applications s Major application segm
PBSS4160V Datasheet (144.68 KB)
PBSS4160V
144.68 KB
Npn transistor.
www.DataSheet4U.com PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 31 January 2005 Product data sheet 1. Product profile 1.1 .
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