PBSS5240V Datasheet - NXP

40 V low VCEsat PNP transistor

PBSS5240V Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High collector current gain (hFE) at high IC

* High efficiency leading to reduced heat generation

* Reduced printed-circuit board area requirements. APPLICATIONS

PBSS5240V General Description

PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. 1 2 3 PBSS5240V QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitte.

PBSS5240V Datasheet (82.76 KB)

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Datasheet Details

Part number:

PBSS5240V

Manufacturer:

NXP ↗

File Size:

82.76 KB

Description:

40 v low vcesat pnp transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product speciﬁcation 2003 Jan 30 Philips Semiconductors Produc.

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PBSS5240V low VCEsat PNP transistor NXP

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PBSS5240V Features

PBSS5240V General Description

Datasheet Details

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