Datasheet4U Logo Datasheet4U.com

PLB16030U - NPN microwave power transistor

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class B narrowband amplifier.

Key Features

  • Input and output matching cell allows an easier design of circuits.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PLB150 Normally Closed OptoMOS Relay IXYS
PLB150 SINGLE POLE OptoMOS Relay Clare
PLB171 Normally Closed Relay IXYS
PLB171P Normally Closed Relay IXYS
PLB190 Normally Closed OptoMOS Relay IXYS

Other Datasheets by NXP Semiconductors

Part Number Description
PLB16004U Microwave power transistor
PLB16012U NPN microwave power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PLB16030U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base class B power amplifiers at 1.6 GHz. Also suitable for operation in the frequency range 1.4 to 1.8 GHz.