Datasheet4U Logo Datasheet4U.com

PMN50XP - P-channel TrenchMOS extremely low level FET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features

  • s Low threshold voltage s Low on-state losses 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMN50XP P-Channel MOSFET VBsemi
PMN50EPE P-channel MOSFET nexperia
PMN50UPE MOSFET NXP Semiconductors
PMN52XP P-channel MOSFET nexperia
PMN55ENE N-channel MOSFET nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PMN55LN uTrenchMOS logic level FET
PMN27XPEA single P-channel Trench MOSFET
PMN35EN MOSFET
PMN38EN N-channel TrenchMOS logic level FET
PMN40LN logic level FET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PMN50XP P-channel TrenchMOS extremely low level FET Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Low threshold voltage s Low on-state losses 1.3 Applications s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment 1.4 Quick reference data s VDS ≤ −20 V s RDSon ≤ 60 mΩ s ID ≤ −4.8 A s QGD = 1.3 nC (typ) 2. Pinning information Table 1: Pin 1, 2, 5, 6 3 4 Pinning Description drain (D) gate (G) source (S) 1 2 3 G S 003aaa671 Simplified outline 6 5 4 Symbol D SOT457 (TSOP6) Philips Semiconductors PMN50XP P-channel TrenchMOS extremely low level FET 3.
Published: |