PTB23001X transistors equivalent, npn microwave power transistors.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
Common-base, class B power amplifiers up to 4.2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor.
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
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PTB23001X; PTB23003X; PTB23005X
PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIP.
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