BLF871S Description
BLF871; BLF871S UHF power LDMOS transistor Rev.04 * 19 November 2009 Product data sheet 1.Product profile 1.1 General .BLF871S Features
* 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion =BLF871S Applications
* and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 40 V in a common-source 860 MHz test
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