BLF871S
Description
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz.
Key Features
- 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion = -35 dBc
- DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion = -34 dBc (4.3 MHz from center frequency) NXP Semiconductors BLF871; BLF871S UHF power LDMOS transistor
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
