Description
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
The transistor can deliver 100 W broadband from HF to 1 GHz.
The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Features
- 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion =.
- 35 dBc.
- DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion.
BLF871S Datasheet
