BLF871S Datasheet Uhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 100 W broadband from HF to 1 GHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion =.
35 dBc.
DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion.

Brand Logo	Part Number	Description	Manufacturer
	BLF871S	Power LDMOS transistor	Ampleon
	BLF871	Power LDMOS transistor	Ampleon