BLF871S
Overview
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz.
- 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A:
- Peak envelope power load power = 100 W
- Power gain = 21 dB
- Drain efficiency = 47 %
- Third order intermodulation distortion = -35 dBc
- DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A:
- Average output power = 24 W
- Power gain = 22 dB
- Drain efficiency = 33 %
- Third order intermodulation distortion = -34 dBc (4.3 MHz from center frequency) NXP Semiconductors BLF871; BLF871S UHF power LDMOS transistor
