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BLF871S Datasheet

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLF871S datasheet preview

Datasheet Details

Part number BLF871S
Datasheet BLF871S BLF871 Datasheet (PDF)
File Size 203.23 KB
Manufacturer NXP Semiconductors
Description UHF power LDMOS transistor
BLF871S page 2 BLF871S page 3

BLF871S Overview

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

BLF871S Key Features

  • 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ‹ Peak enve
  • DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ‹ Average outp
  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLF871S from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLF871S Power LDMOS transistor Ampleon
Ampleon Logo BLF871 Power LDMOS transistor Ampleon
NXP Semiconductors logo - Manufacturer

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