BLF871S Datasheet | NXP Semiconductors

description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 40 V in a mon-source 860 MHz test circuit. Mode of operation f PL PL(PEP) PL(AV) Gp ηD IMD3 (MHz) (W) (W) (W) (d B) (%) (d Bc) CW, class AB - - 21 60 - 2-tone, class AB f1 = 860; f2 = 860.1 - 100 - 21 47 - 35 DVB-T (8k OFDM) 858 -- 24 22 33 - 34[1] PAR (d B) 8.3[2] [1] Measured [d Bc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 d B at 0.01 % probability on CCDF. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features - 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ‹ Peak envelope power load power = 100 W ‹ Power gain = 21 d B ‹ Drain efficiency = 47 % ‹ Third order intermodulation distortion = - 35 d Bc - DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ‹ Average output power = 24 W ‹ Power gain = 22 d B ‹ Drain efficiency = 33 % ‹ Third order intermodulation distortion = - 34 d Bc (4.3 MHz from center frequency) NXP Semiconductors BLF871; BLF871S UHF power LDMOS transistor - Integrated ESD protection - Excellent ruggedness - High power gain - High efficiency - Excellent reliability - Easy power...