BLF878 - UHF power LDMOS transistor

Name: BLF878
SKU: BLF878-677026

NXP Semiconductors

The BLF878 by NXP Semiconductors is a UHF power LDMOS transistor. Below is the official datasheet preview.

Datasheet Details

Part number	BLF878
Manufacturer	NXP Semiconductors
File Size	182.68 KB
Description	UHF power LDMOS transistor
Datasheet	BLF878_NXPSemiconductors.pdf
Additional preview pages of the BLF878 datasheet.

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efﬁciency = 46 % N Third order intermodulation distortion =.
35 dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Average output power = 75 W N Power gain = 21 dB N Drain efﬁciency = 32 % N Third order intermodulation distortion =.
32 dBc.

📁 BLF878 Similar Datasheet

Other Datasheets by NXP Semiconductors

Published: Jun 18, 2010 |