PBSS5160T transistor equivalent, pnp transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency due to less heat generation
* Reduces P.
* Major application segments: Automotive Telecom infrastructure Industrial
* Power management: DC-to-DC .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160T.
1.2 Features
* Low collector-emitter saturation voltage VCEsat
* High collecto.
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