PBSS5160T Datasheet
PBSS5160T Datasheet (NXP Semiconductors)
NXP Semiconductors
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T. 1.2 Features Low collector-emitter.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency due to less heat generation
* Reduces Printed-Circuit Board (PCB) area required
* Cost-effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
* Major appli.
PBSS5160T Datasheet (Galaxy Microelectronics)
Galaxy Microelectronics
Production specification PNP Low VCEsat(BISS) Transistor FEATURES z Low collector-emitter saturation voltage VCEsat z High collector current capability IC and ICM z High efficiency, reduces heat gen.
z Low collector-emitter saturation voltage VCEsat z High collector current capability IC and ICM z High efficiency, reduces heat generation z Reduces printed-circuit board area required Pb Lead-free PBSS5160T APPLICATIONS z Major application segments z Power management z Peripheral driver ORDERI.
PBSS5160T Datasheet (Nexperia)
Nexperia
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T. 1.2 Features Low collector-emitter.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency due to less heat generation
* Reduces Printed-Circuit Board (PCB) area required
* Cost-effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
* Major appli.
PBSS5160T Datasheet (Kexin Semiconductor)
Kexin Semiconductor
SMD Type Transistors PNP Transistors PBSS5160T (KBSS5160T) ■ Features ● Low collector-emitter saturation voltage VCEsat ● High collector current capability: IC and ICM ● High efficiency, reduces he.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* High efficiency, reduces heat generation
* Reduces printed-circuit board area required
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
C B
E
0-0.1 +0.10.38
-0.1.