* High reliability Power SO8 package, qualified to 175°C
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
* Ultra low Rdson and low parasitic inductance 1.3 A
PSMN1R2-30YLC Datasheet (369.51 KB)
PSMN1R2-30YLC
NXP ↗ Semiconductors
369.51 KB
Mosfet.
LF PA K PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 3 May 2011 Product data sheet 1..
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