* Advanced TrenchMOS provides low RDSon and low gate charge
* High efficiency gains in switching power converters
* Improved mechanical and thermal characteristics
* LFPAK provides maximum power density in a Power SO8 package 1.3 Applications
* DC-to-DC conve
PSMN2R6-40YS Datasheet (247.75 KB)
PSMN2R6-40YS
NXP ↗ Semiconductors
247.75 KB
N-channel mosfet.
PSMN2R6-40YS N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET Rev. 01 23 June 2009 Product data sheet 1. Product profile 1.1 General descr.
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