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N08L1618C2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM

Datasheet Summary

Description

3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 I/O12 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enab

Features

  • Single Wide Power Supply Range 1.65 to 2.2 Volts.
  • Very low standby current 0.5µA at 1.8V (Typical).
  • Very low operating current 1.0mA at 1.8V and 1µs (Typical).
  • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.2V.
  • Very fast output enable acce.

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Datasheet Details

Part number N08L1618C2A
Manufacturer NanoAmp Solutions
File Size 279.83 KB
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N08L1618C2A Datasheet
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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L1618C2A Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device.
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