Si9926 - Dual N-Channel MOSFET

The Si9926 by Nanxin is a Dual N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	Si9926
Manufacturer	Nanxin
File Size	196.42 KB
Description	Dual N-Channel MOSFET
Datasheet	Si9926-Nanxin.pdf
Additional preview pages of the Si9926 datasheet.

Ratings min Typ max 5.5 14 29 10.2 8.8 1 3.7 0.7 1.0 Unit nS nS nS nS nC nC nC V Typical Characteristics at Ta=250C 2 Si9926 3 Si9926 4

Low On resistance.
1.8V drive.
RoHS compliant. Si9926 Dual N-Channel Enhancement MOSFET Si9926 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm.

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Published: May 11, 2015 |