P5506BDG Overview
Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. IF = 1A, VGS = 0V 22 1 pF nC nS A V REMARK:.
| Part number | P5506BDG |
|---|---|
| Datasheet | P5506BDG-Niko.pdf |
| File Size | 465.08 KB |
| Manufacturer | Niko |
| Description | N-Channel MOSFET |
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Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. IF = 1A, VGS = 0V 22 1 pF nC nS A V REMARK:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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P5506BDG | N-Channel MOSFET | UNIKC |
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P5506BDA | N-Channel MOSFET | INCHANGE |
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P5506BDA | N-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
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P5506BVA | N-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
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P5506BVG | N-Channel MOSFET | UNIKC |
| Part Number | Description |
|---|---|
| P5506BVG | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| P5506HVG | Dual N-Channel Enhancement Mode Field Effect Transistor |
| P5506NVG | N- & P-Channel Enhancement Mode Field Effect Transistor |
| P5504EVG | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| P55N02LD | N-Channel Logic Level Enhancement |