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MGS05N60D - Insulated Gate Bipolar Transistor

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  • cation in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized.

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Datasheet Details

Part number MGS05N60D
Manufacturer ON
File Size 138.74 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet MGS05N60D Datasheet

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Full PDF Text Transcription

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. Built–In Free Wheeling Diodes Built–In Gate Protection Zener Diode Industry Standard Package (TO92 — 1.0 Watt) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA C ™ Data Sheet MGS05N60D IGBT 0.
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